Abstract
A W-band double-balanced mixer for direct up-conversion using standard 90 nm CMOS technology is reported. The mixer comprises an enhanced double-balanced Gilbert cell with current injection for power consumption reduction and dual negative resistance compensation for conversion gain (CG) enhancement, a Marchand balun for converting the single local oscillator (LO) input signal to differential signal, and another Marchand balun for converting the differential RF output signal to single signal. The mixer consumes 13.6 mW and achieves intermediate frequency-port input reflection coefficient (S11) of 11.4 ∼ 11.44 dB for frequencies lower than 1 GHz and LO-port input reflection coefficient (S22) of 12.2 ∼ 28.7 dB for frequencies 75 ∼ 90 GHz. For RF frequencies of 77 ∼ 81 GHz, the mixer achieves CG of 0.6 ∼ 2.1 dB and LO-RF isolation of 35.9 dB, the best CG and isolation results ever reported for a W-band CMOS/BiCMOS mixer with power consumption lower than 15 mW. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:, 2014
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.