Design and Implementation of a High-Performance W-Band Up-Conversion Mixer in 90 nm CMOS

Abstract

A 79 GHz mixer with Dual Negative-Resistance Compensation for direct up-conversion using standard 90nm CMOS technology is reported. The mixer comprises an enhanced double-balanced Gilbert cell with current injection for power consumption reduction, and dual negative resistance compensation for conversion gain (CG) enhancement. A Marchand balun is used for conversion of the single LO input signal to a differential signal, and another Marchand balun is used to convert the differential RF output to a single signal. The mixer consumes 26.52mW and has an LO-port return loss (S22) of -11.12~-11.34dB for frequencies of 75~81GHz, RF-port return loss (S33) of -11.44~-12.98dB for frequencies of 70~90GHz. At an IF of 0.1GHz and an RF of 79GHz, the mixer achieves a CG of 3.7dB and LO-RF isolation of 37.75dB.