Abstract
Renewable energy (RE)-based power generation systems and modern manufacturing facilities utilize a wide variety of power converters based on high-frequency power electronic devices and complex switching technologies. This has resulted in a noticeable degradation in the power quality (PQ) of power systems. To solve the aforementioned problem, advanced active power filters (APFs) with improved system performance and properly designed switching devices and control algorithms can provide a promising solution because an APF can compensate for voltage sag, harmonic currents, current imbalance, and active and reactive powers individually or simultaneously. This paper demonstrates, for the first time, the detailed design procedure and performance of a digitally controlled 2 kVA three-phase shunt APF system using gallium nitride (GaN) high electron mobility transistors (HEMTs). The designed digital control scheme consists of three type II controllers with a digital signal processor (DSP) as the control core. Using the proposed APF and control algorithms, fast and accurate compensation for harmonics, imbalance, and reactive power is achieved in both simulation and hardware tests, demonstrating the feasibility and effectiveness of the proposed system. Moreover, GaN HEMTs allow the system to achieve up to 97.2% efficiency.
Highlights
In recent years, the rapid increase in the penetration level of renewable energy (RE)-based distributed power generation (DPG) has resulted in noticeable degradation in the voltage stability and power quality (PQ) of existing power systems
It has been expected that the mass application of RE-based distributed generation (DG) microgrids or smart grids, and various static and dynamic nonlinear loads is the future trend of development in power systems
This paper has demonstrated, for the first time, a shunt-type gallium nitride (GaN) high electron mobility transistors (HEMTs)-based three-phase active power filters (APFs) controlled by digital signal processor (DSP) systems and type II controllers to achieve simultaneous compensation for current harmonics, load imbalance, and reactive currents
Summary
The rapid increase in the penetration level of renewable energy (RE)-based distributed power generation (DPG) has resulted in noticeable degradation in the voltage stability and power quality (PQ) of existing power systems. There are currently few papers addressing the design issues and reporting performances of GaN-based three-phase inverters in practical application cases. This paper presents the key design procedure and demonstrates for the first time the performance of a 2-kVA GaN-based three-phase shunt APF system. GaN HEMTs are believed to be the most promising solution for low- to medium-power applications because of their advantages such as higher breakdown voltage, lower on-resistance, and higher switching speed compared with conventional Si-based switching devices; these advantages can increase system efficiency and power density significantly and lead to new opportunities for achieving power converters with improved performance. According to the circuit specifications of the three-phase inverter and commonly assumed inductor current ripple, 10% of output current, it is calculated that the required inductance should be at least larger than 500 μH
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