Design and Implementation of 400 W Flyback Converter Using SiC MOSFET

Abstract

AC–DC converters are inevitable for most of the electronic equipment operating in universal voltage supply. Galvanic isolation is a primitive requirement in any AC–DC converter to avoid shock hazards. In conventional systems, line frequency transformer is used for galvanic isolation followed by AC–DC conversion resulting in bulky and inefficient system. Flyback converter is one of the topologies adopted for isolated DC–DC power supply from universal AC input. The high-voltage stress appearing across the primary switch and the leakage inductance of the primary inductor limits the use of flyback converter for low-voltage and power applications. This limitation could be addressed by using SiC MOSFET which has a higher drain to source breakdown voltage. This paper demonstrates the implementation of 400 W flyback converter with universal AC input and output regulated to 100 V DC using peak current mode control. Steps for selecting ratings of switch, diode, transformer, compensation circuit and comparative study on RCD and TVS diode snubber are presented.