Abstract
This work investigated the impact of periodic thickness and doping region on the doping efficiency of the P-type AlGaN superlattice. In this paper, the band structure of the simulated superlattice was analyzed. The superlattice structure of Al0.1Ga0.3N/Al0.4Ga0.6N, and the AlGaN buffer on the sapphire substrate, achieved a resistivity of ~3.3 Ω·cm. The results indicate that barrier doping and low periodic thickness offer significant advantages in introducing a reduction of the resistivity of P-type AlGaN superlattice structures.
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