Abstract
In this letter, we present the design and fabrication of a novel ZnO-based film bulk acoustic wave resonator (FBAR) microwave devices. The novel FBAR devices employ a new-type of Bragg reflector with very thin chromium (Cr) layer formed between SiO2 and W films. The Cr layer seems to enhance the adhesion between SiO2 and W layers. The novel FBAR devices show good return losses (S11) and high Q-factors at the frequency range of 2.7-3.0 GHz. This approach will be very helpful for mobile worldwide interoperability for microwave access applications.
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