Abstract
In this review, we briefly summarize the major challenges and our recent progress in the development of GaN Junction Barrier Schottky (JBS) diodes using selective-area p-type doping with ion implantation and ultra high-pressure annealing (UHPA) process. As a starting point, we discuss the properties of Schottky contacts in the context of UHPA and provide design principle for a high performance JBS diode. Next, we propose a JBS diode having p-type regions formed by channeled ion implantation. This kind of device can provide ultra-low leakage currents and a much better trade-off between on-resistance (R ON) and breakdown voltage (BV). Finally, we demonstrate our high-performance JBS diodes which exhibited the superior electrical characteristics (record low R ON from 0.57 to 0.67 mΩ cm2 and high BV from 660 to 675 V) and nondestructive breakdown.
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