Design and fabrication of PZT microcantilevers with freestanding structure

Abstract

For developing freestanding piezoelectric microcantilevers with low resonant frequency, some critical mechanical considerations, especially cantilever bending, were given in this study. Two strategies, using piezoelectric thick films and adding a stress compensation layer, were calculationally analyzed for mitigating the cantilever bending, and then was applied for the fabrication of PZT freestanding microcantilevers. (100) oriented PZT thick films with the thickness of 6.93 μm were grown on the Pt/SiO2/Si substrate by chemical solution deposition (CSD), and the SiO2 layer with the thickness of 1.0 μm was kept under the PZT layer as a stress compensation layer of the freestanding microcantilevers. The freestanding microcantilevers fabricated with the micromachining process possessed the resonant frequency of 466.1 Hz, and demonstrated no obvious cantilever bending.