Abstract
A highly sensitive (metal/nanostructure silicon /metal) photodiode has been fabricated from rapid thermal oxidation (RTO) and rapid thermal annealing (RTA) processes,Of nanostructures porous silicon prepared by laser assisted etching . Photoresponse was investigated in the wavelength rang of (400-850nm) . A responsivity of (3A/w) was measured at (450 nm) with low value of dark current of about ( 1 µA /cm2 ) at 5 volt reverse bias.
Highlights
Since the discovery of effective visible photoluminescence (PL) at room temperature from highly porous silicon, a great deal of attention has been paid to its electronic properties because of the potential applications in Si-based optoelectronics(O
After cutting into (1×1.5 cm2)specimens and standard cleaning steps, we prepared porous silicon structures by photoelectrochemical etching (PECE) .In this technique the samples are dipped into mixture of HF:Ethanol (1:1) for 20 minutes with anodization current density that was varied from 10 to 40 mA/cm2
We can see that the dark current decreased from (1660 μm/cm2) at etching current density 10 mA/cm2 and reached to smaller value(1 μm/cm2 ) at etching current density 30 mA/cm2, The decrease in dark current for four etching current density is due to decrease in thermally generated carriers so that the conductivity and dark current were reduced
Summary
Since the discovery of effective visible photoluminescence (PL) at room temperature from highly porous silicon (psi), a great deal of attention has been paid to its electronic properties because of the potential applications in Si-based optoelectronics(O. 1994); (psi) has many unique characteristics such as direct and wide modulated energy band gap , high resistivity , vast surface area-to-volume ratio and the same single-crystal structure as bulk silicon .Those advantages make it a suitable material for photodetectors(Nobuyoshi Koshida and Hideki Koyama. (Psi) photodetector manufactured through conventional method is found to have several shortcomings, such as unstable optical and electrical characteristics, insufficient light sensitivity, insufficient low dark-current and insufficient photo-current, the application range for (psi)photodectors is somewhat limited (Ming-Kwei Lee. 1998). (RTO) and (RTA) are utilized to improve the stability of (psi)photodetector, enhance photodetectore’s photo-current, and reduce dark-current of photodetectors at the same time and expend the application of (psi) photodetectors(M.
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