Abstract
The paper demonstrates the design, simulation, fabrication, and analysis of InGaN/GaN superlattice (SL) solar cell with photonic crystal (PhC) structure at the top surface. Ten pairs of In0.18Ga0.82N / GaN structure were grown by metal organic chemical vapor deposition technique and had been used as an absorbing layer for solar cell device. PhC light-trapping structure (LTS) was prepared with the top indium tin oxide and p-GaN layers. Both simulation and experimental results demonstrate that PhC LTS structure considerably enhances the efficiency of solar cells. The simulation parameters were optimized and calculated using rigorous-coupled wave analysis method. The experimental studies under 1-sun illumination at standard test conditions exhibit efficiency enhancement of 59% compared to SL structure without PhC LTS.
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