Abstract
The fabrication and characterization of In xGa 1 − x N/GaN-based solar cells that use In xGa 1 − x N multiple quantum wells (MQWs) and a SiCN/Si(111) substrate are reported. Solar cell operation with a low dark current density (J d), a high open-circuit voltage (V oc), a high short-circuit current density (J sc), and a high fill factor (FF) is demonstrated. It was found that the proposed device and fabrication technology are applicable to the realization of solar cells with a low J d of 2.14 to 8.88 μA/cm 2, a high V oc of 2.72 to 2.92 V, a high J sc of 2.72 to 2.97 mA/cm 2, and a high FF of 61.51 to 74.89%. The device performance with various quantum-well configurations was investigated under an air mass 1.5 global solar spectrum. A high photovoltaic efficiency of 5.95% in the MQW sample over the p-i-n sample was observed.
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