Design and fabrication of highly efficient antireflective coating in MWIR on germanium using ion-assisted e-beam deposition

Abstract

We present the design, fabrication, and characterization of a multilayer anti-reflective (AR) coating on a Germanium (Ge) substrate for mid-wavelength infrared (MWIR) applications using the ion-assisted electron-beam evaporation (IAPVD) technique. The AR coating structure comprises five layers of thin films, alternating between low (nL) and high (nH) refractive index materials, specifically silicon dioxide (SiO2) and Ge. The total thickness of the multilayer structure is maintained below 2 μm. The design was meticulously optimized for the 3.6–4.9 μm MWIR range using OptiLayer software, achieving an impressive average transmission of 99.492 % and an average reflectance of merely 0.508 % over a broadband spectral width of 1300 nm. Following the fabrication process using the IAPVD technique, the empirical results demonstrated an average transmission of 98.56 % and a reflectance value of 0.177 % within the 3.6–4.9 μm range. A strong correlation was observed between the simulated and the fabricated results, with a deviation of only 0.331 % on the reflectance value, proving the accuracy and reliability of the design and fabrication process. This work introduces a highly efficient solution for AR coatings on Ge surfaces, enhancing the performance of electro-optical applications in the MWIR region. To the best of our knowledge, the newly designed Ge/SiO2 multilayer structure and the results achieved have not been previously documented in the literature, and offer substantial improvements in transmission efficiency and reflectance reduction for Ge-based optical systems.