Design and fabrication of high performance 4H-SiC TJBS diodes

Abstract

Abstract In this paper, high performance 4H-SiC trench junction barrier Schottky diodes (TJBS) have been successfully designed and fabricated. For making a larger design window that enables good reverse blocking and forward conduction capabilities at the same time in TJBS, trench profile, especially bevel angle (θ) of a tapered trench sidewall, are further studied. The optimal design is verified by the experimental results measured from the fabricated 4H-SiC JBS and TJBS diodes. Experimental results show that the reverse leakage current (Ir) of the TJBS is only 1.62 × 10−7 A/cm2 at Vr of 1200 V, which is about one order of magnitude less than that of planar JBS (PJBS) fabricated at the same time. The figure of merit (FOM) of TJBS is improved by 56.3% when compared with that of the PJBS.