Design and Fabrication of All-NbN SFQ Circuits for SSPD Signal Processing

Abstract

We have developed an all-NbN integrated circuit technology for future integration of single flux quantum (SFQ) circuit with superconducting single-photon detector array. The all-NbN integrated circuits consist of epitaxial NbN/AlN/NbN tunnel junctions fabricated on single-crystal MgO substrates, Mo shunt resistors and 500-nm-thick NbN ground plane on the top. Critical current density and sheet resistance of the Mo resistor were set at 2.5 kA/cm2 and 1.2 Ω, respectively. Current uniformity of the NbN/AlN/NbN tunnel junctions was measured to be σ = 3% for 3 μm × 3 μm junction size. The NbN-based SFQ logic cells were designed for and tested at 4.2 K. We actually measured circuit inductances of the fabricated SFQ cells. Circuit simulation revealed that the measured circuit inductances in the fabricated SFQ cells should allow operating margins of more than +/-20%.