Design and fabrication of a three terminal quantum storage device

Abstract

We have a significant new development in our group's resonant tunneling diode memory switching devices that should enhance application in ultra-dense memory and logic. The original device, a double barrier resonant tunneling diode in the GaAs-AlAs materials system has shown multiple conduction states and memory switching in Schrodinger Poisson and Wigner formalism simulations, as well as in laboratory measurements. In new work we have demonstrated this phenomenon for similarly designed triple barrier resonant tunneling devices in Schrodinger Poisson simulations and in the laboratory. Memory switching has not been previously reported in these devices. The triple barrier device is part of our development of a three terminal quantum storage device which we believe will have significantly enhanced switching characteristics. The additional AlAs layer has been used as an etch stop in the fabrication of three terminal devices. A process has been developed using a suscinic acid selective etch to etch down to the top AlAs layer where metal is evaporated directly on the N/sup +/ layer forming a Schottky contact.