Abstract
This paper presents the structure and process technology of simple and low-cost wafer-level packaging (WLP) for thin film radio frequency (RF) devices. Low-cost practical micromachining processes were proposed as an alternative to high-cost processes, such as silicon deep reactive ion etching (DRIE) or electro-plating, in order to reduce the fabrication cost. Gold (Au)/Tin (Sn) alloy was utilized as the solder material for bonding and hermetic sealing. The small size fabricated WLP of <TEX>$1.04{\times}1.04{\times}0.4mm^3$</TEX> had an average shear strength of 10.425 <TEX>$kg/mm^2$</TEX>, and the leakage rate of all chips was lower than <TEX>$1.2{\times}10^{-5}$</TEX> atm.cc/sec. These results met Military Standards 883F (MIL-STD-883F). As the newly proposed WLP structure is simple, and its process technology is inexpensive, the fabricated WLP is a good candidate for thin film type RF devices.
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