Abstract
We present a single-mode laser on a p-InP substrate suitable for bonding on silicon-on-insulator (SOI) wafer. The laser can realize single mode lasing with etching perturbing slots by standard photolithography and an inductively coupled-plasma (ICP) etching technique without any regrowth steps. The parameters were designed using the simulation tool “cavity modeling framework” (CAMFR). The single mode of 1539 nm wavelength at the threshold current of 130 mA with the maximum output power of 3.9 mW was obtained at 10 °C in continuous-wave operation. The simple technology, low cost and the single-mode characteristics make the broad area slotted single-mode FP laser a promising light source on the silicon-based optical interconnection applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
