Design and electro-optical characterization of Si-based resonant cavity light emitting devices at 850 nm

Abstract

We report on the fabrication and characterization of Si/SiO 2 Fabry–Perot microcavities. These structures are used to enhance the external quantum efficiency along the cavity axis and the spectral purity of emission from silicon rich oxide films that are used as active media to fabricate a Si based RCLED (resonant cavity light emitting devices). A new structure to electrically pump the active media in the resonant cavity has been designed. These structures are fabricated by chemical vapour deposition on a silicon substrate. The microcavities are tuned at 850 nm and present a quality factor ranging from 17 to 150 depending on the number of pairs constituting the dielectric mirrors. An enhancement of the electro and photoluminescence (PL) signal of 20 times is achieved for the selected emission wavelength. These cavities are characterized by TEM analysis to evaluate film uniformity, thicknesses and the densification after annealing processes for temperature ranging from 800 to 1100 °C. The electrical properties of the active media are analyzed. The electroluminescence spectral features are compared with PL spectra correlated with the quality factor of the cavities. The photometric diagram shows also a high directionality of the emitted light within a 30° cone from the sample normal.