Design and development of micromachined bilateral interdigital coplanar waveguide RFphase shifter compatible with lateral double diffused metal oxide semiconductor voltagecontroller on silicon

Abstract

In this paper, the design concepts and measurement results for a compact phase shifter arepresented. By employing high dielectric constant materials and bilateral interdigitalcoplanar waveguide designs, we have demonstrated an analog Ka-band phase shifter on an8 mm2 area. This device uses barium strontium titanate thin films to realize electrically tunabletransmission line components. Modifications to improve the accuracy of analytical formulaefor the capacitance of interdigital structures have been proposed. Fabricationprocesses presented here are fully compatible with lateral double diffused metal oxidesemiconductors on high resistivity silicon, thus enabling the integration of a voltagecontroller. The device presented here can also be modified as a delay line that gives180° phase delay at 10 GHz with a line length of just 2.8 mm.