Abstract
We present the performance of a unipolar barrier long-wave type-II InAs/GaSb superlattice (SLS) photodetector with a 50% cut-off wavelength of approximately 8.7 microns. In this study, the ability to lower dark current densities over traditional PIN diodes is presented by way of hetero-structure engineering of a pBiBn structure utilizing superlattice Ptype (P) and N-type (N) contacts, Intrinsic (I) superlattice active (absorber) region, and unipolar superlattice electron and hole blocking (b) layers. The spectral response of this pBiBn detector structure was determined using a Fourier Transform Infrared (FTIR) Spectrometer and the quantum efficiency (QE) was determined using a narrow 6250 nm narrow band filter and a 500K blackbody source. A diode structure designed, grown, and fabricated in this study yielded a dark current density of less than one (1) mA/cm 2 at a reverse bias of 150 mV and a specific detectivity value of greater than 10 11 Jones at 77K. In addition to single point temperature measurements, a variable temperature study (80K-300K) of the dark current is presented for a diode demonstrating diffusion limited dark current from 160K down to 80K.
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