Abstract
We investigate four novel negative-differential-resistance (NDR) circuits using the combination of the standard Si-based n-channel metal-oxide-semiconductor field-effect-transistor (NMOS) and SiGe-based heterojunction bipolar transistor (HBT). By suitably designing the parameters, we can obtain the �- or N-type current---voltage (I---V) curve. Especially, the peak current of the combined I---V curve could be easy adjusted by the external voltage. In application, we utilize the NDR circuit to design an inverter circuit based on the monostable---bistable transition logic element. The fabrication of these NDR circuits and applications could be completely implemented by the simple and standard Si-based CMOS or SiGe-based BiCMOS process without using the complex and expensive process such as metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
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