Abstract
In this paper, an N-MCT with a low threshold voltage of off-FET has been investigated by simulation and experiment. We have demonstrated the MCT with self-aligned spacer formation and recess process, which results in uniform off-FET channel length. And boron is implanted to adjust the threshold voltage of off-FETs. The threshold voltage of non-doped and proposed MCT was -1.2 V and 0.6 V, respectively. The forward blocking voltage of both MCTs was similar to 1800 V and the turn-on voltage of MCTs was 0.2 V and 0.75 V, respectively. The non-doped and proposed MCTs exhibit the same di/dt around 35.7 kA/㎲ and peak current of 2.69 kA. That is pointed out that this proposed MCT structure is promising because the current driving capability is improved without degradation of on-state characteristics.
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