Abstract
Herein, metal-oxide-semiconductor fields effect transistors (MOSFET) are fabricated and characterized. p− type germanium dioxide coated onto Au/n-CdSe substrates and top contacted with carbon point contacts is used to form the MOSFET devices. The structural investigations which were carried out with the help of X-ray diffraction technique revealed large lattice mismatched polycrystalline layers of CdSe and GeO2. The design of the energy band diagram has shown the formation of two Schottky arms (Au/n− CdSe, C/GeO2) at the interfaces of the n− CdSe/p− GeO2 layers. The capacitance-voltage characteristics which are recorded in the frequency domain of 1.0-50.0 MHz revealed the ability of formation of NMOS and PMOS layers. The signal frequency controlled built in potential is tunable in the range of 2.34 and 5.18 eV. In addition, the conductance and capacitance spectral analyses in the frequency domain of 10-1800 MHz revealed the domination of current conduction by tunneling and correlated barriers hoping below and above 760 MHz, respectively. In addition to its features as MOSFET devices, the Au/CdSe/GeO2/C hybrid devices are found to be appropriate for use as microwave cavities.
Highlights
Germanium dioxide thin films have occupied the interest of researchers since years
The metal-oxide-semiconductor fields effect transistors (MOSFET) which are illustrated in the inset of Figure 1 are fabricated by depositing n −CdSe onto Au substrates and coating p −GeO2 onto the Au/n −CdSe layers
We have shown that it is possible to fabricate a metal- oxide-semiconductor field’s effect transistor (MOSFET) from the CdSe/GeO2 heterojunctions coated onto Au substrate and top contacted with carbon point contacts
Summary
Germanium dioxide thin films have occupied the interest of researchers since years. It is regarded as promising material which can be employed in more than one technology sector. As for examples, GeO2 is used in lithium batteries owing to their capability of charge storage[1]. Porous GeO2(s)/Ge(c) nanostructures which were used as lithium‐ion battery anode revealed capacity of 1.33 Ah/g at a current density of 0.1 A/g1. Germanium dioxide crystals are regarded as smart materials for the production of piezoelectricity. The electron and hole mobility’s of the germanium oxide reached 377 and 29 cm2/Vs, respectively. Germanium oxide nanoparticles which were prepared from the bulk GeO2 powders using the hydrothermal technique are mentioned exhibiting characteristics of electrically erasable memory devices[5]
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