Abstract
We report on the design and characterization of pseudomorphic high-electron-mobility transistors for linear power applications. Compared to a conventional single heterojunction, the double-heterojunction PHEMT shows a flat transconductance of >200 mS/mm over a wide gate bias swing. A high breakdown voltage of 15 V was measured. A flat cutoff frequency (fT) of >15 GHz over a wide gate and drain bias region was achieved. A maximum oscillation frequency (fmax) of >75 GHz was obtained. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 17: 50–53, 1998.
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