Abstract
A low drive field 1 megabit bubble memory device has been developed with relaxed function designs and a planar process using a new type of Siloxane resin. The 1 megabit device uses a block replicate/swap organization based upon 1.9 μm diameter bubbles. The basic cell size is 7 μm×8 μm while the minimum feature size has a value of 1 μm. The chip size is 9.1 mm × 9.9 mm. Fabricated 1 megabit chips have been characterized over a drive field range of 45 to 65 Oe (peak field of 100 kHz triangular wave drive), and over a temperature range of 0 to 90°C. The results obtained in the characterization for the 1 megabit chips are good enough to guarantee the same drive field and sense requirements for packaged 1 megabit devices as those for 3 μm bubble 256 kbit devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
