Abstract
In this work we introduced 2DEG (2-Dimentional Electron Gas) structure of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) and compared it with a conventional structure. 2DEG structure is a heterostructure which is formed by combination of group III-IV elements. Our proposed GaN HEMT can be employed for high speed, high power, and high voltage applications. For high power applications we used SOD (Silicon-On-Diamond) technology to transfer heat to the substrate. This research paper will present design of two models using SILVACO TCAD device simulation software. One is the design of 2DEG structure and another one is the conventional structure of Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) HEMT.
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