Abstract
We report composite-channel heterostructure field-effect transistors (HFETs) with an InAs channel and an In0.9Al0.1As subchannel. The HFETs are grown on antimonide buffer layers. Two composite-channel structures with different planar Te doping schemes are designed, fabricated, and characterized. High radio-frequency transconductances of above 0.9 S/mm and ∼55GHz current gain cutoff frequencies are achieved in devices with 500 nm gates. Planar Te doping in the buffer layers reduces the high kink-effect currents otherwise found in InAs/AlSb HFETs, an effect which can be attributed to either increased breakdown field in the In0.9Al0.1As subchannel or to suppression of hole blocking in the buffer. The present limitations to device performance and suggested approaches for their elimination are discussed.
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