Abstract
ABSTRACTA novel, close-spaced, inverted, stagnation flow, organometallic vapor phase epitaxy (OMVPE) reactor has been designed and fabricated for achieving high deposition efficiency and good large-area uniformity for solar cell applications. A computer model for this reactor, which is based on the conservation of mass, momentum, energy and species equations, has been used for predicting its operating characteristics. Due to the close spacing between the nozzle and susceptor, extensive measurements of the nozzle temperature were carried out for different reactor conditions and compared with simulation results. The maximum nozzle temperature was about 110°C showing the feasibility of GaAs growth from trimethylgallium and arsine. GaAs epitaxial layers were grown at different susceptor-nozzle distances, gas flow rates, reactor pressures and susceptor temperatures. The morphology, electrical properties and thickness uniformity of the layers were found to be of an acceptable quality. The measured and computed deposition efficiencies were found to be independent of reactor pressure and increasing with decreasing gas flow rates. The highest gallium deposition efficiency achieved was about 42%.
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