Abstract
The change in electron energy is the key to ionization. Studying the change law plays an important role in analyzing the gap discharge process. In this paper, an electron energy measurement system is designed based on a silicon photodiode, and the feasibility analysis is given. Combined with a photomultiplier tube, the electron energy of a slightly uneven field of a 3 cm ball-to-plate gap under dc voltage is obtained during the discharge process. This system can obtain the relationship curve between external voltage and electron energy, which provides help in analyzing the development of the discharge process and the establishment of the criteria.
Highlights
The gap discharge process is a long-term concern in the field of high voltage
According to the carrier multiplication effect, an electron energy measurement system based on the silicon photoelectric diode is built in this paper, and the feasibility analysis is given to realize the quantitative measurement of electron energy between electrodes in the discharge process
Where Isc is the current flowing through the silicon photoelectric diode and USPD is the reverse voltage applied to the silicon photoelectric diode
Summary
The gap discharge process is a long-term concern in the field of high voltage. Scholars generally believe that electrons in gap molecules absorb energy, ionize to form free electrons, and continuously give rise to impact ionization, causing the development of electron avalanche, eventually forming streamers, accompanied by photon emission, and the discharge turns from self-sustaining to realize breakdown. In recent years, scholars at home and abroad have gradually perfected the theoretical system of the development process of gap discharge through a large number of discharge tests from optical signals and injected charge amount.. An electron energy measurement system is designed based on EBIC technology to measure the electronic energy between electrodes qualitatively and semiquantitatively during discharge. According to the carrier multiplication effect, an electron energy measurement system based on the silicon photoelectric diode is built in this paper, and the feasibility analysis is given to realize the quantitative measurement of electron energy between electrodes in the discharge process. A photomultiplier tube (PMT) is used to quantitatively observe the whole process of discharge in a 3 cm sphere-plate gap under dc voltage, the variation rule of electron energy in the dielectric region during the discharge process is obtained, and the corresponding relation curve between the applied voltage between electrodes and the electron energy in the dielectric region is found
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