Abstract
A dielectric distributed Bragg reflector (DBR) formed by four pairs of hydrogenated amorphous silicon/silicon nitride layers is used as the back reflector in thin-film silicon solar cells. The DBR was designed to perform in a broad wavelength range with the peak reflectance at 600nm. The DBR was fabricated at low substrate temperature (172°C) and applied at the rear side of flat and textured amorphous silicon single-junction solar cells in both superstrate (pin) and substrate (nip) configurations. The spectral response and electrical I–V characteristics were measured. Solar cells with optimized DBR exhibit an enhanced external quantum efficiency in the long wavelength range and the electrical performance is comparable to solar cells having conventional Ag back reflector.
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