Design and application of CMOS active inductor in bandpass filter and VCO for reconfigurable RF front-end

Abstract

This paper presents the design of gyrator-C active inductor. Current reuse technique reduces the noise of transconductor in gyrator. Bandpass filter and voltage-controlled oscillator (VCO) are designed based on the proposed active inductor. Post-layout simulations and PVT analysis are carried out using 180 nm RFCMOS technology at 1.8 V supply voltage. Bandpass filter with center frequency 2.45 GHz attains a noise figure of 6 dB. VCO with a tuning range of 1.5 GHz–2.8 GHz attains a phase noise of −99.86 dBc/Hz. The active area occupied by bandpass filter and VCO are 150 μm × 150 μm and 145 μm × 145 μm respectively.