Abstract
Abstract: The use of in-memory computing is a promising strategy with the potential to circumvent the von Neumann bottleneck and improve the overall performance of contemporary computer systems. In this study, the design and analysis of an innovative XNOR-SRAM cell for use in in-memory computing applications is presented. The performance of the suggested cell is assessed using crucial parameters such as cell ratio (CR), pull-up ratio (PR), static noise margin (SNM), write margin (WM), and read margin(RM)MA. Simulation and optimization of the proposed cell are carried out with the assistance of LTSPICE and the HSPICE tool . According to the findings, the XNOR-SRAM cell has greater performance when compared to the traditional 6T SRAM cell. This paves the way for the XNOR-SRAM cell to become a viable choice for in-memory computing.
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