Design and analysis of SRAM cell in 4H-SiC

Abstract

Memory forms a major part of any integrated circuit (IC) and is considered a key component of an electronic system. Though various ICs using silicon carbide (SiC) have been designed and demonstrated, yet in order to make a complete functioning electronic module in SiC, memory design and architecture are needed. In this work, we report the design and analysis of a Static Random Access (SRAM) cell in SiC, which is capable of operating at high temperatures and high speeds. The paper highlights the potential and stable operation of the cell in terms of static noise margins (Read and Hold) and access times (Read and Write). The results show that the designed cell is capable of operating even at a low supply voltage of 5 V, as opposed to the conventional 15 V used in SiC circuits. The proposed design shows stable operation across a wide temperature range (27 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">o</sup> C C-500 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">o</sup> C) and across all operating parameters, validating the potential of memory architecture in SiC.