Design and Analysis of Si/CaF<sub>2</sub> Near-Infrared (λ∼1.7µm) DFB Quantum Cascade Laser for Silicon Photonics

Abstract

We have designed a near-infrared wavelength Si/CaF2 DFB quantum cascade laser and investigated the possibility of single-mode laser oscillation by analysis of the propagation mode, gain, scattering time of Si quantum well, and threshold current density. As the waveguide and resonator, a slab-type waveguide structure with a Si/CaF2 active layer sandwiched by SiO2 on a Si (111) substrate and a grating structure in an n-Si conducting layer were assumed. From the results of optical propagation mode analysis, by assuming a λ/4-shifted bragg waveguide structure, it was found that the single vertical and horizontal TM mode propagation is possible at the designed wavelength of 1.70 μm. In addition, a design of the active layer is proposed and its current injection capability is roughly estimated to be 25.1 kA/cm2, which is larger than required threshold current density of 1.4 kA/cm2 calculated by combining analysis results of the scattering time, population inversion, gain of quantum cascade lasers, and coupling theory of a Bragg waveguide. The results strongly indicate the possibility of single-mode laser oscillation.