Design and Analysis of Johnson Counter Using Finfet Technology

Abstract

Conventional CMOS technology's performance deteriorates due to increased short channel effects. Double-gate (DG) FinFETs has better short channel effects performance compared to the conventional CMOS and stimulates technology scaling. The main drawback of using CMOS transistors are high power consumption and high leakage current. Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS in nano- scale circuits.FinFET, which is a double-gate field effect transistor (DGFET), is more versatile than traditional single-gate field effect transistors because it has two gates that can be controlled independently. Usually, the second gate of FinFET transistors is used to dynamically control the threshold voltage of the first gate in order to improve the performance and reduce leakage power. In this paper, we proposes a synchronous johnson counter by using FinFET Technology.FinFET logic implementation has significant advantages over static CMOS logic in terms of power consumption. The proposed counter was fabricated in 16nm FinFET technology in HSPICE.