Abstract
We present a new high-speed drift-enhanced InGaAs/InP mushroom vertical PIN photodetector which is integrated on a GaAs/AlGaAs F-P filter cavity using an undercut mushroom mesa structure to significantly reduce both the detectorRCconstant and the parasitic capacitance. A 3dB bandwidth of 110 GHz and a quantum efficiency of 68% are simultaneously obtained at 1.55 μm wavelength.
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