Design and analysis of an InGaAs/InGaAsP quantum well microlaser with longitudinal periodical strain distribution for single-mode lasing.

Abstract

Single-mode lasing for small size semiconductor laser is significantly important in the on-chip optical signal processing, data storage, and dense optical integrated systems. This paper presents new, to the best of our knowledge, single-mode quantum well microlasers by distributing periodical strain along the longitudinal laser cavity. The quantum transmission line modeling (Q-TLM) method is employed to establish the model for strained microlasers. The dynamic output of quantum well microlasers with longitudinal periodical strain (LPS) distribution is analyzed in the time and frequency domains, and it is found that the introduction of LPS significantly improves the single-mode output of quantum well microlasers by increasing the side mode suppression ratio (SMSR) from 8.44 to 28.29 dB. The study results confirm that well-controlled periodical strain along the longitudinal laser cavity provides an alternative routine for realizing single-mode lasing by strain engineering.