Design and analysis of a single-stage source coupled complementary metal oxide semiconductor voltage control oscillator using 45 nm technology

Abstract

This paper deals with the design and performance analysis of a single-stage source coupled complementary metal oxide semiconductor voltage controlled oscillator (VCO). VCO is a crucial component in many wireless communication and signal processing systems. Single-stage VCO provides effective power reduction in comparison to the traditional LC tank (LC circuit known as resonant circuit, or tank circuit, which consists of an inductor [L] and a capacitor [C]) and ring VCO. By reducing the noise source, we have provided the single-stage VCO circuit with a low phase noise performance. The VCO is intended to control as a frequency synthesiser in a phase locked loop (PLL) to generate local oscillation frequency. The proposed single-stage VCO is implemented in 180 nm and 45 nm cadence virtuoso environment. VCO provides high oscillation frequency (THz), less power dissipation (1.708 × 10‒21 W) and lower delay (50.4 fsec) in 45 nm technology with (V dd = 0.7 V). Simulation result shows an effective performance improvement in 45 nm technology in comparison to 180 nm technology.