Abstract
In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology.
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