Design, analysis of high electron mobility field effect transistors by a self-consistent method

Abstract

Three HEMT (high-electron-mobility transistor) structures, the single-heterostructure HEMT (SH-HEMT), the quantum-well HEMT (QW-HEMT) and the delta-doped HEMT ( delta -HEMT), are analyzed theoretically by solving the Schrodinger equation and Poisson equation self-consistently. The potential and the carrier distribution as well as the charge control by gate bias are calculated for different structural parameters. Parallel conduction in AlGaAs, which is severe for SH-HEMTs, is greatly reduced in QW-HEMT and delta -HEMT structures. The effect of layer parameters such as spacer-layer thickness and quantum-well width on device performance has been studied. >