Design analysis of a multi-port 8-shaped inductor for RF applications

Abstract

Portable wireless devices with a high-frequency range should also function with low voltage, providing low power dissipation and noise. Design engineers cannot successfully meet the above design objectives without using RF inductors. Since integrated inductors are an essential part of RF circuits, these devices are highlighted because of their enormous size in the circuit layout and unsettling radiations. As a result, there is a solid motivation to design, optimize, and model inductors made on Si substrates. This article presents the design of a multi-path multi-port 8-shaped inductor with dimensions of 150 × 150 μm, simulated using Cadence EMX simulator to analyze its Q-factor and inductance. The analysis provided that the simulated inductance has the highest value of 12.2 nH, which is the maximum value across all the conclusions of this research. Another significant discovery was that this Inductor is suitable for up to 45 GHz. To achieve an improved frequency of operation for the multi-path, multi-port 8-shaped Inductor, an analysis of the Inductor’s topology is conducted, focusing on enhancing the loop widths of metal layers and optimizing spacing between the metal tracks.