Design a novel 5.8 GHz wideband low noise amplifier in CMOS technology for WLAN applications

Abstract

A novel complementary metal-oxide semiconductor (CMOS) low noise amplifier (LNA) was designed in this paper for wireless local area network (WLAN) applications in the 5.8 GHz ISM band. The LNA presents low voltage and low power dissipation design integrated in TSMC 0.18 µm standard CMOS technology and achieves a gain of 15.2 dB, a noise figure of 2.5 dB and an IIP3 of −6.5 dBm with input return loss −38.5 dB, output return loss of −46.1 dB while dissipating just 4.96 mW from a 1V supply voltage.