Abstract
This paper summarizes a theoretical-experimental optimization of several antireflection structures for crystalline silicon solar cells for space use. The work was made using Si02, Ta205 single layer and MgF2ZnS double layer over polished surfaces. The optimization was made using reflection curves and short-circuit current densities, which were obtained from each of the analysed structures. Experimental short-circuit current density of 44,05 mA/cm2 was obtained for MgF2-ZnS double layer, while for Ta205 and SiO2 single layer the results were 41,26 mA/cm2 and 39,02 mA/cm2 respectively. These results were compared with maximum short-circuit current density of 46,33 mA/cm2 for a standard cell with no reflection. Reflection curves and short-circuit current densities of double layer are less sensitive to thickness variation, when compared with single layer ones.
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