Abstract
Low dielectric constant films (low- k) are of importance in microelectronics for improving the switching speed in ultra large scale integrated circuits. Nanoporous SiOCH films provide a route to lowering the static dielectric constant. To avoid diffusion of species present in the further steps of integration and to increase the adhesion of other dielectric layers, a N 2O-enhanced plasma treatment was applied on porous methylsisesquioxane-based low- k films. In this paper, the effect of the treatment on the microstructure was studied by coupling ellipsometry with solvent adsorption. Thanks to spectroscopic ellipsometric measurements, we showed that the treated films should be described with a two-layer model. Moreover, it appeared that the plasma treatment affected only the upper part of the films, which underwent chemical and morphological changes, and did not modify the lower one.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
