Description of non-equilibrium phenomena in pulsed MOS capacitors

Abstract

A theoretical investigation of the non-equilibrium phenomena of pulsed MOS capacitors is presented. Unlike treated previously, a time-dependent minority carrier generation rate of bulk traps is considered and an improved model for the generation width is applied. A differential equation is found, which describes the change of the space-charge region in the non-equilibrium transients. The dependence of MOS capacitance and current on the width of the space-charge region is ascertained. In such a manner we can describe the non-equilibrium transients of pulsed MOS capacitors more accurately than in previous works.