Abstract
Highly transparent amorphous Si-doped InZnO (SIZO) thin film was deposited on glass substrate by RF magnetron sputtering at room temperature. The optical constants of SIZO thin film were measured by the ellipsometry. Various parameters were calculated that result from using refractive index and extinction coefficient. In SIZO material system, dielectric constant of real part (er) value are larger than dielectric constant of imaginary part (ei) value due to the low extinction coefficient (k) value. In addition, the optical bandgap also showed 3.45 eV calculated using the (αhv)2 vs hv plot. From this result, the transparency of the SIZO thin film in the visible light region was confirmed, the Debye length of the SIZO thin film transistor was calculated, and the change in the effective carrier concentration was confirmed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Transactions on Electrical and Electronic Materials
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
