Abstract
Free-standing GaN films grown by hydride vapor phase epitaxy (HVPE) on c-plane sapphire have been studied for in-plane anisotropic strain. Lattice parameters are obtained from high-resolution X-ray diffraction data and the film quality is determined by measuring the rocking curves and by 71Ga nuclear magnetic resonance (NMR). The in-plane strain was determined using grazing incidence X-ray diffraction and conventional X-ray measurements. It is found that the in-plane lattice parameter varies with depth and has estimated surface strain anisotropy of 4.0791×10-3 up to a thickness of 0.3 μm. The 71Ga NMR experiments reveal different degrees of inhomogeneity amongst the three samples. This is shown by the appearance of an additional broad central-transition peak shifted to higher frequency by a Knight shift from conduction electrons in sample regions having high carrier concentrations.
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