Abstract
We investigated the electronic structure as well as the magnetic properties of a Co2MnSi film on MgO(100) element-specifically at the interface to a MgO tunnel barrier by means of X-ray absorption spectroscopy and X-ray magnetic circular dichroism. The electronic structure of the Co atoms as a function of the capping layer thickness remained unchanged, whereas the XA spectra of Mn indicate an increase of the unoccupied d states. The experimental findings are consistent with the interfacial structure proposed in the work by B. Hülsen et al. [Phys. Rev. Lett. 103, 046802 (2009)], where a MnSi layer is present at the interface to the MgO with oxygen atoms at top positions in the first MgO layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have