Abstract
AlGaN/GaN high electron mobility transistors with 0.125 μm gate length were rf stressed at 10 GHz. Depth resolved cathodoluminescence (CL) was employed to investigate the role of defects in devices that exhibited typical mean time to failure (MTTF) compared to those that suffered from infant mortality. The CL spectra exhibited both laterally and vertically localized defect emission within the channel of devices that failed early, indicating the presence of an increased concentration of VGa-based defects within the device. Additionally, residual compressive stress was observed in all devices after electrical stress.
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