Abstract
We have estimated broadening of sputter profiles for a monolayer of Si, buried in GaAs, under Ar+, Cs+ and O2+ bombardment using the systematics observed in high-energy mixing experiments. Excellent agreement has been found between theoretical predictions and experimental data for all three types of primary ions. In the case of O2+ bombardment, however, good agreement is only achieved by taking into account changes at the instantaneous surface induced by incorporation of oxygen during sputtering.
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